Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede

Abstract

The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer (3; 3', 3") of GaN on a substrate (1) wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer (3a) of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer (4a) of BwAlxGaylnzN, (c2) growth of a layer (3b) of BwAlxGaylnzN, (c3) growth of an intermediate layer (4b) of BwAlxGaylnzN, at least one of the layers (3b, 4a, 4b) formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer (3; 3', 3") of GaN.

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